Official Website：https://www.vbsemi.com/<br />#Chip<br />The evaluation experiment of our products and competitive products has the following parameters:<br /><br />- Single channel power (Single P)<br />- High voltage withstand voltage (VDS (V)): -30V<br />- Gate source voltage (VGS (±V)): 20V<br />- Threshold voltage (Vth (V)): -3V<br />- Drain-source resistance at 4.5V (VGS = 4.5V (mΩ)): 8mΩ<br />- Drain-source resistance at 10V (VGS = 10V (mΩ)): 5mΩ<br />- Drain current (ID (A)): -18A<br />- Technology (Technology): Trench<br />- Package (Package): SOP8
