"VBsemi RTR025N03TL-VB is an N-Channel field effect transistor, the specific parameters are as follows: <br /><br />- Rated voltage (VDS): 30V <br />- Rated current (ID): 6.5A <br />- Static drain-source resistance (RDS(ON)): 30mΩ (at VGS=10V, VGS=20V) <br />- Threshold voltage (Vth): 1.2~2.2V <br /><br />The package is SOT23. <br /><br />**Application introduction: **<br />This transistor is suitable for various electronic fields, especially in circuits requiring N-Channel channels, such as power amplifiers, switching power supplies, etc. Due to its low drain-source resistance and high current carrying capacity, it can be used in circuits requiring higher power and efficiency. <br /><br />**Main features:**<br />- Ultra-low drain-source resistance<br />- High current carrying capacity<br />- Suitable for applications such as load switches and power amplifiers<br /><br />**Typical application areas and modules:**<br />1. **Power amplifier module:** Due to its high current carrying capacity, it can be used in audio power amplifier modules. <br />2. **Switching power supply module:** Suitable for switching power supply modules to provide stable power output. <br />3. **Drive circuit:** Can be used in various drive circuits that require N-Channel channels. <br /><br />This transistor can be used in designs for electronic devices that require low leakage current, high efficiency and high power."<br />
