Official Website：https://www.vbsemi.com/<br />#Chip<br />"**VBsemi UTD351G-AE3-R-VB**<br /><br />- **Parameter Description:**<br />- Package Type: SOT23<br />- Channel Type: N-Channel<br />- Maximum Withstand Voltage: 30V<br />- Maximum Current: 6.5A<br />- Turn-on Voltage (Gate-source Voltage): Vth=1.2~2.2V<br />- Turn-on Resistance: RDS(ON)=30mΩ @ VGS=10V, VGS=20V<br /><br />- **Application Introduction:**<br />- **SOT23 Package:** Small, suitable for electronic applications in compact spaces. <br />- **N-Channel Design:** Suitable for circuits requiring N-type field effect transistors. <br />- **Medium Voltage, High Current:** Suitable for power management applications requiring larger currents under medium voltage conditions. <br />- **Low on-resistance:** Provides lower on-resistance, which helps improve circuit performance. <br /><br />- **Fields and module applications:**<br />- **Power management module:** Due to its N-Channel design and large current capability, it can be used in medium voltage power management modules. <br />- **Motor drive:** Suitable for motor drive circuits that need to control large currents. <br />- **Power inverter:** Used to build medium power DC to AC power inverters. <br />- **LED drive:** Due to its low on-resistance, it can be used in LED drive circuits to improve efficiency. <br /><br />This VBsemi UTD351G-AE3-R-VB field effect transistor is suitable for a variety of power management and power control applications, especially in scenarios with high current requirements under medium voltage conditions."<br />
